Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation Ingestion-build-96603 Testing laboratories/test personnel

Testing laboratories/test personnel

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Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation Ingestion-build-96603 Testing laboratories/test personnel1 Scope This Technical Report specifies a procedure for the certification of the areic dose of an ion implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface analytical use. The WoRM is in the form of a polished (or similarly smooth faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion implanted with