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G04600 - SEMI G46 - Test Method for Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits Revision:Default Title as seen through communications with

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Description

as seen through communications with the factory

or MEMS devices with tracing parts and/or components of their manufacturing equipment

It defines the properties of SOI wafers that are meant for use in LSI CMOS applications

SEMI MF1451-1104 (technical revision)

Initially available at www

G04600 - SEMI G46 - Test Method for Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits Revision:Default Title as seen through communications withEvaluation of semiconductor die attachment integrity using the thermal transient techniques as implemented by the Electrical Test Method on either thermal test chips or active devices. Steady state thermal response (or thermal resistance) and thermal transient response of discrete semiconductor devices and integrated circuits are sensitive to the presence of voids in the die attachment material between the semiconductor chip and package. These voids

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